PMBT4403,235
- Mfr.Part #
- PMBT4403,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 600MA SOT23
- Stock
- 752
- In Stock :
- 752
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transition Frequency :
- 200MHz
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 600mA
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Published :
- 2015
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Power Dissipation :
- 250mW
- Frequency :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Turn On Time-Max (ton) :
- 40ns
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 200MHz
- JESD-609 Code :
- e3
- Base Part Number :
- PMBT4403
- Transistor Element Material :
- SILICON
- Datasheets
- PMBT4403,235

PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT4403,235 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
PMBT4403,235 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
PMBT4403,235 Applications
There are a lot of Nexperia USA Inc.
PMBT4403,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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