PMBT3906VS115
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- Mfr.Part #
- PMBT3906VS115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- NOW NEXPERIA PMBT3906VS - SMALL
- Stock
- 6,008
- In Stock ：
- 6,008
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Package / Case :
- SOT-563, SOT-666
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Surface Mount
- Pin Count :
- 6
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Power Dissipation :
- 360mW
- Max Collector Current :
- 200mA
- Turn Off Time-Max (toff) :
- 300ns
- Element Configuration :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -6V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- Transistor Type :
- 2 PNP (Dual)
- Max Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Number of Pins :
- 6
- Polarity :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- hFE Min :
- 180
- Base Part Number :
- PMBT3906VS
- Gain Bandwidth Product :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Number of Elements :
- 2
- Terminal Form :
- Flat
- Number of Terminations :
- 6
- Turn On Time-Max (ton) :
- 70ns
- Max Power Dissipation :
- 360mW
- Datasheets
- PMBT3906VS115
Specialized ICs NXP Semiconductors PMBT3906VS115 Overview
The Specialized ICs NXP Semiconductors PMBT3906VS115 is an advanced bipolar junction transistor (BJT) array that offers superior performance for a wide array of electronic applications. This product is part of NXP's commitment to providing high-quality and reliable semiconductor solutions. The PMBT3906VS115, housed in a compact SOT666 package, is designed to handle a maximum collector-emitter voltage of 40V and a collector current up to 0.2A, making it highly suitable for high-density integration in modern electronic circuits.
With its robust design and advanced material technology, this transistor array ensures low collector-emitter saturation voltage, which significantly enhances overall device efficiency and performance. Its high current gain and fast switching capabilities make it an excellent choice for demanding applications requiring high reliability and performance consistency.
Key Features
Key features of the Specialized ICs NXP Semiconductors PMBT3906VS115 include:
- Low collector-emitter saturation voltage for efficient operation
- High current gain, facilitating improved signal amplification
- Low noise output, ideal for sensitive audio and signal processing applications
- High switching speed to support applications requiring fast switching capabilities
- Exceptional reliability under varying environmental conditions
Applications
The Specialized ICs NXP Semiconductors PMBT3906VS115 is versatile enough to be used in a variety of applications, including but not limited to:
- Audio amplifiers, where clean and stable amplification is necessary
- Motor control circuits, providing reliable operation for both small and large motors
- Switching power supplies, enhancing power efficiency and stability
- Automotive electronics, for robust and durable electronic components
- Industrial control systems, where precision and reliability are paramount
- Telecommunications systems, ensuring consistent performance and reliability in communication infrastructures
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