PMBD914,235

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Radiation Hardening :

No

Pin Count :

3

Capacitance @ Vr, F :

1.5pF @ 0V 1MHz

Diode Element Material :

SILICON

Forward Voltage :

1.25V

Published :

2009

Peak Reverse Current :

25nA

Mount :

Surface Mount

Min Operating Temperature :

-65°C

Base Part Number :

PMBD914

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Peak Non-Repetitive Surge Current :

4A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Output Current-Max :

0.215A

Number of Elements :

1

Operating Temperature - Junction :

150°C Max

Reverse Recovery Time :

4 ns

Current - Reverse Leakage @ Vr :

1μA @ 75V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Max Surge Current :

4A

Power Dissipation :

250mW

Number of Pins :

3

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Time@Peak Reflow Temperature-Max (s) :

30

Current - Average Rectified (Io) :

215mA DC

Max Operating Temperature :

150°C

Max Reverse Leakage Current :

25nA

Terminal Form :

Gull wing

Lead Free :

Lead Free

Average Rectified Current :

215mA

Recovery Time :

4 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.10.00.70

Factory Lead Time :

4 Weeks

Max Reverse Voltage (DC) :

100V

Terminal Position :

Dual

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Diode Type :

Standard

Max Repetitive Reverse Voltage (Vrrm) :

100V

Forward Current :

215mA