PHT2NQ10T,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Pin Count :

4

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

430m Ω @ 1.75A, 10V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Power Dissipation-Max :

6.25W Tc

Series :

TrenchMOS™

Surface Mount :

yes

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Drain-source On Resistance-Max :

0.43Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-261-4, TO-261AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN