PHP83N03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin

Terminal Position :

Single

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

240A

Pin Count :

3

Number of Terminations :

3

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

JESD-609 Code :

e3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1660pF @ 25V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±15V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

120 mJ

Drain-source On Resistance-Max :

0.012Ohm

Power Dissipation-Max :

115W Tc

DS Breakdown Voltage-Min :

25V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

25V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Case Connection :

DRAIN