PHP66NQ03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

93W Tc

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

228A

Drain Current-Max (Abs) (ID) :

66A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V

Published :

2004

Drain-source On Resistance-Max :

0.0136Ohm

Pin Count :

3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Series :

TrenchMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Qualification Status :

Not Qualified

Surface Mount :

No

DS Breakdown Voltage-Min :

25V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

90 mJ

Vgs (Max) :

±20V

FET Type :

N-Channel

Mounting Type :

Through Hole