PHK12NQ03LT,518

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1335pF @ 16V

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

12A

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 12A, 10V

Number of Elements :

1

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

2 (1 Year)

JESD-609 Code :

e4

Series :

TrenchMOS™

Number of Pins :

8

Terminal Position :

Dual

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

35.3A

Gate Charge (Qg) (Max) @ Vgs :

17.6nC @ 5V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JEDEC-95 Code :

MS-012AA

Avalanche Energy Rating (Eas) :

440 mJ

FET Type :

N-Channel

Qualification Status :

Not Qualified

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0105Ohm

Surface Mount :

yes

Continuous Drain Current (ID) :

11.8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

8

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2001