PHK13N03LT,518

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

Packaging :

Tape and Reel (TR)

HTS Code :

8541.29.00.75

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.02Ohm

Vgs (Max) :

±20V

Number of Elements :

1

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

6.25W Tc

Input Capacitance (Ciss) (Max) @ Vds :

752pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 5V

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e4

Number of Terminations :

8

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Published :

2009

Mounting Type :

Surface Mount

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

13.8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

MS-012AA

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Qualification Status :

Not Qualified

Factory Lead Time :

16 Weeks

Terminal Position :

Dual