PHD78NQ03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Series :

TrenchMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

25V

Mounting Type :

Surface Mount

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

100 mJ

Number of Elements :

1

Terminal Position :

Single

FET Type :

N-Channel

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

25V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0135Ohm

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

107W Tc

Drain Current-Max (Abs) (ID) :

75A

Vgs(th) (Max) @ Id :

2V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2009

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 12V