PHD55N03LTA,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Power Dissipation-Max :

85W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

55A

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

Avalanche Energy Rating (Eas) :

60 mJ

DS Breakdown Voltage-Min :

25V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Element Material :

SILICON

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchMOS™

Published :

1997

Drain-source On Resistance-Max :

0.018Ohm

Pulsed Drain Current-Max (IDM) :

220A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Surface Mount :

yes