PH9930L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Power Dissipation-Max :

62.5W Tc

JESD-609 Code :

e3

Terminal Position :

Single

Pin Count :

4

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JEDEC-95 Code :

MO-235

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 4.5V

Additional Feature :

LOW CONDUCTION LOSS

Avalanche Energy Rating (Eas) :

53 mJ

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Published :

2007

Number of Terminations :

4

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

214A

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G4

Package / Case :

SC-100, SOT-669

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

63A

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0135Ohm

Vgs (Max) :

±20V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1565pF @ 12V