PH955L,115
- Mfr.Part #
- PH955L,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 62.5A LFPAK56
- Stock
- 38,627
- In Stock :
- 38,627
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 62.5A
- HTS Code :
- 8541.29.00.75
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Series :
- TrenchMOS™
- Published :
- 2009
- Package / Case :
- SC-100, SOT-669
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 62.5A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G4
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 187A
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 62.5W Tc
- JEDEC-95 Code :
- MO-235
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 195 mJ
- Drain to Source Voltage (Vdss) :
- 55V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2836pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 8.3m Ω @ 25A, 10V
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.0083Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 5V
- DS Breakdown Voltage-Min :
- 55V
- Additional Feature :
- LOGIC LEVEL
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 20 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- PH955L,115

N-Channel Tape & Reel (TR) 8.3m Ω @ 25A, 10V ±20V 2836pF @ 25V 42nC @ 5V 55V SC-100, SOT-669
PH955L,115 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 195 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2836pF @ 25V.62.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 187A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
PH955L,115 Features
the avalanche energy rating (Eas) is 195 mJ
based on its rated peak drain current 187A.
a 55V drain to source voltage (Vdss)
PH955L,115 Applications
There are a lot of Nexperia USA Inc.
PH955L,115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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