PH8030L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

76.7A Tc

Drain-source On Resistance-Max :

0.0097Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 12V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

62.5W Tc

Series :

TrenchMOS™

Drain Current-Max (Abs) (ID) :

76.7A

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Pin Count :

4

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

95 mJ

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 4.5V

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G4

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 25A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

300A

Vgs (Max) :

±20V

Surface Mount :

yes

Terminal Position :

Single

JESD-609 Code :

e3

Package / Case :

SC-100, SOT-669

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V