PH7030L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Surface Mount :

yes

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

115 mJ

ECCN Code :

EAR99

Case Connection :

DRAIN

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

62.5W Tc

Terminal Finish :

Tin

Vgs(th) (Max) @ Id :

2V @ 1mA

Terminal Position :

Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

220A

Published :

2009

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

68A Tc

Drain Current-Max (Abs) (ID) :

68A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.011Ohm

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

1362pF @ 10V

JEDEC-95 Code :

MO-235

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SC-100, SOT-669

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G4

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 10A, 10V