PH6325L,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0095Ohm

Continuous Drain Current (ID) :

78.7A

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

236A

JEDEC-95 Code :

MO-235

Vgs(th) (Max) @ Id :

2V @ 1mA

Avalanche Energy Rating (Eas) :

115 mJ

Power Dissipation-Max :

62.5W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

78.7A Tc

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Package / Case :

SC-100, SOT-669

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Published :

2011

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Pin Count :

4

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 25A, 10V

DS Breakdown Voltage-Min :

25V

Drain to Source Voltage (Vdss) :

25V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Number of Pins :

4

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1871pF @ 12V