PH6325L,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

115 mJ

Vgs(th) (Max) @ Id :

2V @ 1mA

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

25V

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 25A, 10V

Package / Case :

SC-100, SOT-669

Continuous Drain Current (ID) :

78.7A

Number of Pins :

4

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

236A

Published :

2011

Terminal Position :

Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1871pF @ 12V

Number of Terminations :

4

Surface Mount :

yes

JEDEC-95 Code :

MO-235

Power Dissipation-Max :

62.5W Tc

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

25V

Drain-source On Resistance-Max :

0.0095Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

78.7A Tc