PH5525L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

81.7A

Terminal Form :

Gull wing

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

81.7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 12V

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 25A, 10V

Published :

2006

JESD-609 Code :

e3

JEDEC-95 Code :

MO-235

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

300A

Package / Case :

SC-100, SOT-669

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

25V

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 4.5V

Pin Count :

4

Drain to Source Voltage (Vdss) :

25V

Qualification Status :

Not Qualified

Power Dissipation-Max :

62.5W Tc

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

100 mJ

JESD-30 Code :

R-PSSO-G4

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0082Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single