PH5330E,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

130 mJ

Power Dissipation-Max :

62.5W Tc

Drain-source On Resistance-Max :

0.0085Ohm

Terminal Position :

Single

Surface Mount :

yes

Series :

TrenchMOS™

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SC-100, SOT-669

Drain Current-Max (Abs) (ID) :

80A

JEDEC-95 Code :

MO-235

Mounting Type :

Surface Mount

Number of Elements :

1

ECCN Code :

EAR99

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

Pulsed Drain Current-Max (IDM) :

250A

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2010pF @ 10V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Pin Count :

4

DS Breakdown Voltage-Min :

30V