PH4830L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

84A Tc

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Vgs (Max) :

±20V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

240A

JEDEC-95 Code :

MO-235

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

121 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G4

Package / Case :

SC-100, SOT-669

Drain Current-Max (Abs) (ID) :

84A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.15V @ 1mA

HTS Code :

8541.29.00.95

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

22.9nC @ 4.5V

Drain-source On Resistance-Max :

0.0048Ohm

Number of Terminations :

4

ECCN Code :

EAR99

Power Dissipation-Max :

62.5W Tc

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2786pF @ 12V

FET Type :

N-Channel