PH4530L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

MO-235

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

23.5nC @ 5V

RoHS Status :

ROHS3 Compliant

Published :

2004

Number of Elements :

1

Package / Case :

SC-100, SOT-669

Pin Count :

4

Drain Current-Max (Abs) (ID) :

80A

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

62.5W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G4

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

Terminal Finish :

Tin

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1972pF @ 10V

Avalanche Energy Rating (Eas) :

130 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 15A, 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0072Ohm