PH4330L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

22.9nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.007Ohm

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

121 mJ

Surface Mount :

yes

JEDEC-95 Code :

MO-235

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 25A, 10V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Published :

2008

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

95.9A

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Pin Count :

4

Transistor Element Material :

SILICON

Number of Terminations :

4

Power Dissipation-Max :

62.5W Tc

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2786pF @ 12V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

SC-100, SOT-669

JESD-30 Code :

R-PSSO-G4

Number of Elements :

1

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

95.9A Tc