PH4030AL115
- Mfr.Part #
- PH4030AL115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- 39,133
- In Stock :
- 39,133
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- TrenchMOS™
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Supplier Device Package :
- LFPAK56, Power-SO8
- Input Capacitance :
- 2.09nF
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Pins :
- 5
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 69W
- Gate Charge (Qg) (Max) @ Vgs :
- 36.6nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2090pF @ 12V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 4mOhm @ 15A, 10V
- Published :
- 2011
- Power Dissipation :
- 69W
- Turn-Off Delay Time :
- 44 ns
- Drain to Source Breakdown Voltage :
- 35V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 51ns
- Continuous Drain Current (ID) :
- 100A
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 28 ns
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 18 ns
- Radiation Hardening :
- No
- Max Operating Temperature :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 4 mΩ
- Drain to Source Resistance :
- 4mOhm
- Element Configuration :
- Single
- Package / Case :
- SC-100, SOT-669
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- PH4030AL115
N-Channel Tape & Reel (TR) 4mOhm @ 15A, 10V 2090pF @ 12V 36.6nC @ 10V 30V SC-100, SOT-669
PH4030AL,115 Overview
A device's maximal input capacitance is 2090pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 35V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 4mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 28 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).
PH4030AL,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 35V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 4mOhm
a 30V drain to source voltage (Vdss)
PH4030AL,115 Applications
There are a lot of Nexperia USA Inc.
PH4030AL,115 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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