PH4030AL115

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Mfr.Part #
PH4030AL115
Manufacturer
NXP Semiconductors
Package / Case
SC-100, SOT-669
Datasheet
Download
Description
SMALL SIGNAL N-CHANNEL MOSFET
Stock
39,133
In Stock :
39,133

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
TrenchMOS™
Vgs(th) (Max) @ Id :
2.15V @ 1mA
Supplier Device Package :
LFPAK56, Power-SO8
Input Capacitance :
2.09nF
Drain to Source Voltage (Vdss) :
30V
Number of Pins :
5
Mounting Type :
Surface Mount
Max Power Dissipation :
69W
Gate Charge (Qg) (Max) @ Vgs :
36.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Input Capacitance (Ciss) (Max) @ Vds :
2090pF @ 12V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
4mOhm @ 15A, 10V
Published :
2011
Power Dissipation :
69W
Turn-Off Delay Time :
44 ns
Drain to Source Breakdown Voltage :
35V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
51ns
Continuous Drain Current (ID) :
100A
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55°C
Turn On Delay Time :
28 ns
Mount :
Surface Mount
Fall Time (Typ) :
18 ns
Radiation Hardening :
No
Max Operating Temperature :
175°C
Packaging :
Tape and Reel (TR)
Rds On Max :
4 mΩ
Drain to Source Resistance :
4mOhm
Element Configuration :
Single
Package / Case :
SC-100, SOT-669
RoHS Status :
ROHS3 Compliant
Datasheets
PH4030AL115
Introducing Transistors - FETs, MOSFETs - Single NXP Semiconductors PH4030AL115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Mounting Type:Surface Mount, Package / Case:SC-100, SOT-669, PH4030AL115 pinout, PH4030AL115 datasheet PDF, PH4030AL115 amp .Beyond Transistors - FETs, MOSFETs - Single NXP Semiconductors PH4030AL115 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tape & Reel (TR) 4mOhm @ 15A, 10V 2090pF @ 12V 36.6nC @ 10V 30V SC-100, SOT-669

PH4030AL,115 Overview


A device's maximal input capacitance is 2090pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 35V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 4mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 28 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).

PH4030AL,115 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 35V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 4mOhm
a 30V drain to source voltage (Vdss)


PH4030AL,115 Applications


There are a lot of Nexperia USA Inc.
PH4030AL,115 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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