PH3230S,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 10V

Qualification Status :

Not Qualified

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.0065ohm

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

428A

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 5V

Package / Case :

SC-100, SOT-669

Pin Count :

4

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

100A

DS Breakdown Voltage-Min :

30V

HTS Code :

8541.29.00.75

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

2.5 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

62.5W

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G4

Operating Temperature (Max) :

150°C

JESD-609 Code :

e3

Published :

2009

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Terminations :

4

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Elements :

1

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JEDEC-95 Code :

MO-235AA

Drain Current-Max (Abs) (ID) :

107A

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Mode :

ENHANCEMENT MODE