PH3230S,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature (Max) :

150°C

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Continuous Drain Current (ID) :

100A

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

2.5 mJ

Drain Current-Max (Abs) (ID) :

107A

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

3V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 5V

FET Type :

N-Channel

Published :

2009

Power Dissipation-Max (Abs) :

62.5W

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

SC-100, SOT-669

JESD-30 Code :

R-PSSO-G4

Drain-source On Resistance-Max :

0.0065ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Case Connection :

DRAIN

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

30V

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 10V

Pulsed Drain Current-Max (IDM) :

428A

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

MO-235AA

Surface Mount :

yes

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED