PH3120L,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Terminal Form :

Gull wing

Turn-Off Delay Time :

114 ns

Pin Count :

4

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4457pF @ 10V

Power Dissipation-Max :

62.5W Tc

Rds On (Max) @ Id, Vgs :

2.65m Ω @ 25A, 10V

Lead Free :

Lead Free

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pulsed Drain Current-Max (IDM) :

300A

Gate Charge (Qg) (Max) @ Vgs :

48.5nC @ 4.5V

Turn On Delay Time :

34 ns

Continuous Drain Current (ID) :

100A

JESD-30 Code :

R-PSSO-G4

Fall Time (Typ) :

88 ns

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

62.5W

ECCN Code :

EAR99

Rise Time :

90ns

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain-source On Resistance-Max :

0.0037Ohm

Number of Pins :

5

Package / Case :

SC-100, SOT-669

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V