PH2925U,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

10V

Rise Time :

80ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

3m Ω @ 25A, 4.5V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn-Off Delay Time :

258 ns

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

950mV @ 1mA

Number of Pins :

4

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

6150pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Power Dissipation :

62.5W

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 4.5V

Pin Count :

4

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

Power Dissipation-Max :

62.5W Tc

Series :

TrenchMOS™

Surface Mount :

yes

Transistor Application :

SWITCHING

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

30 ns

Package / Case :

SC-100, SOT-669

Radiation Hardening :

No

Max Dual Supply Voltage :

25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2009

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Fall Time (Typ) :

114 ns

Drain to Source Breakdown Voltage :

25V

Pulsed Drain Current-Max (IDM) :

300A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

100A

Height :

1.1mm

Width :

5mm

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

250 mJ

Number of Terminations :

4