PH20100S,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Number of Pins :

4

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Surface Mount :

yes

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

Continuous Drain Current (ID) :

34.3A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

62.5W Tc

JEDEC-95 Code :

MO-235

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.023Ohm

Package / Case :

SC-100, SOT-669

Series :

TrenchMOS™

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

34.3A Tc

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

250 mJ

Rds On (Max) @ Id, Vgs :

23m Ω @ 10A, 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2264pF @ 25V

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V