PH1955L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.021Ohm

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

17.3m Ω @ 25A, 10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.95

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

4

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1992pF @ 25V

DS Breakdown Voltage-Min :

55V

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

80 mJ

JEDEC-95 Code :

MO-235

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

75W Tc

Pulsed Drain Current-Max (IDM) :

160A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Package / Case :

SC-100, SOT-669

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Series :

TrenchMOS™

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

40A

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin

Qualification Status :

Not Qualified

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

JESD-609 Code :

e3

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±15V

Mounting Type :

Surface Mount