PD84008L-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

26.7W

Power Dissipation :

26.7W

Factory Lead Time :

11 Weeks

Pin Count :

14

Voltage - Test :

7.5V

Case Connection :

SOURCE

Number of Terminations :

5

Current - Test :

250mA

Terminal Position :

QUAD

Frequency :

870MHz

Min Operating Temperature :

-65°C

Terminal Finish :

MATTE TIN

Gate to Source Voltage (Vgs) :

15V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

25V

Continuous Drain Current (ID) :

7A

JESD-30 Code :

S-PQCC-N5

Number of Elements :

1

Max Operating Temperature :

150°C

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

25V

Transistor Type :

LDMOS

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

7A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

Base Part Number :

PD84008

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerVDFN

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gain :

15.5dB

Peak Reflow Temperature (Cel) :

225

Element Configuration :

Single

Power - Output :

2W

Drain Current-Max (Abs) (ID) :

7A