PD84008L-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

25V

Case Connection :

SOURCE

Element Configuration :

Single

Mount :

Surface Mount

Power Dissipation :

26.7W

JESD-609 Code :

e3

Gain :

15.5dB

Drain Current-Max (Abs) (ID) :

7A

Gate to Source Voltage (Vgs) :

15V

Transistor Application :

AMPLIFIER

Max Power Dissipation :

26.7W

Base Part Number :

PD84008

Number of Pins :

8

Current - Test :

250mA

Peak Reflow Temperature (Cel) :

225

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

5

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

JESD-30 Code :

S-PQCC-N5

Power - Output :

2W

Pin Count :

14

Factory Lead Time :

11 Weeks

Number of Elements :

1

Terminal Position :

QUAD

Transistor Type :

LDMOS

Voltage - Test :

7.5V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current Rating :

7A

Operating Mode :

ENHANCEMENT MODE

Max Operating Temperature :

150°C

Min Operating Temperature :

-65°C

Package / Case :

8-PowerVDFN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7A

Radiation Hardening :

No

Frequency :

870MHz