PD84006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

5A

Max Power Dissipation :

59W

Polarity/Channel Type :

N-Channel

Current - Test :

150mA

Max Output Power :

6W

Power Dissipation :

59W

Packaging :

Tube

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

25V

Min Operating Temperature :

-65°C

Number of Pins :

3

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

7.5V

JESD-30 Code :

R-PDSO-G2

Transistor Type :

LDMOS

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Gate to Source Voltage (Vgs) :

15V

Terminal Finish :

Matte Tin (Sn) - annealed

Frequency :

870MHz

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Factory Lead Time :

52 Weeks

Case Connection :

SOURCE

Current Rating :

5A

Continuous Drain Current (ID) :

5A

Qualification Status :

Not Qualified

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gain :

15dB

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Package / Case :

PowerSO-10 Exposed Bottom Pad

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Number of Elements :

1

Pin Count :

10

Base Part Number :

PD84006

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant