PD54003-E

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Mfr.Part #
PD54003-E
Manufacturer
STMicroelectronics
Package / Case
PowerSO-10 Exposed Bottom Pad
Datasheet
Download
Description
FET RF 25V 500MHZ PWRSO10
Stock
5,110
In Stock :
5,110

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Terminal Position :
Dual
Current Rating :
4A
Voltage - Test :
7.5V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
REACH SVHC :
No SVHC
Max Power Dissipation :
52.8W
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Number of Elements :
1
Voltage - Rated DC :
25V
Current - Test :
50mA
Continuous Drain Current (ID) :
4A
Frequency :
500MHz
Package / Case :
PowerSO-10 Exposed Bottom Pad
Mount :
Surface Mount
Drain Current-Max (Abs) (ID) :
4A
Additional Feature :
High Reliability
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Pin Count :
10
Transistor Type :
LDMOS
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Power Dissipation :
52.8W
Number of Terminations :
2
Case Connection :
SOURCE
Min Operating Temperature :
-65°C
Factory Lead Time :
25 Weeks
Number of Pins :
2
Max Operating Temperature :
165°C
Max Output Power :
3W
Base Part Number :
PD54003
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Polarity/Channel Type :
N-Channel
Lead Free :
Lead Free
Packaging :
Tube
Drain to Source Breakdown Voltage :
25V
Drain to Source Voltage (Vdss) :
25V
ECCN Code :
EAR99
Power Gain :
12dB
Transistor Application :
AMPLIFIER
Terminal Form :
Gull wing
Datasheets
PD54003-E
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics PD54003-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerSO-10 Exposed Bottom Pad, Number of Terminations:2, Number of Pins:2, Base Part Number:PD54003, PD54003-E pinout, PD54003-E datasheet PDF, PD54003-E amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics PD54003-E ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics PD54003-E


PD54003-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

PD54003-E                            Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first SToriginated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.


PD54003-E                            Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 3 W with 12 dB gain @ 500 MHz

■ New RF plastic package


PD54003-E                             Applications

• Networking

• SONET/SDH

• WiMax / WLAN

• Computing

• Phase Locked Loops


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