PBSS5240Y,115

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Mfr.Part #
PBSS5240Y,115
Manufacturer
NXP Semiconductors
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS PNP 40V 3A 6TSSOP
Stock
3,000
In Stock :
3,000

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Manufacturer :
NXP Semiconductors
Product Category :
Unclassified
Factory Lead Time :
4 Weeks
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
210 @ 1A 2V
Max Collector Current :
2A
Transistor Element Material :
SILICON
Radiation Hardening :
No
Number of Elements :
1
Transition Frequency :
100MHz
ECCN Code :
EAR99
Max Breakdown Voltage :
40V
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
40V
Terminal Finish :
Tin (Sn)
Pin Count :
6
Base Part Number :
PBSS5240
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
5V
Mount :
Surface Mount
Gain Bandwidth Product :
100MHz
Polarity/Channel Type :
PNP
Number of Pins :
6
Peak Reflow Temperature (Cel) :
260
Published :
2009
Terminal Position :
Dual
Max Power Dissipation :
430mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Number of Terminations :
6
Package / Case :
6-TSSOP, SC-88, SOT-363
Vce Saturation (Max) @ Ib, Ic :
350mV @ 200mA, 2A
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
40V
Collector Base Voltage (VCBO) :
40V
Lead Free :
Lead Free
Power Dissipation :
430mW
Frequency :
100MHz
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
JESD-609 Code :
e3
Element Configuration :
Single
Datasheets
PBSS5240Y,115
Introducing Unclassified NXP Semiconductors PBSS5240Y,115 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PBSS5240, Operating Temperature:150°C TJ, Number of Pins:6, Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, Mounting Type:Surface Mount, PBSS5240Y,115 pinout, PBSS5240Y,115 datasheet PDF, PBSS5240Y,115 amp .Beyond Unclassified NXP Semiconductors PBSS5240Y,115 ,we also offer 5801925, F-631, 47480-0001, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS5240Y,115


PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount

PBSS5240Y,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

PBSS5240Y,115 Features


the DC current gain for this device is 210 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


PBSS5240Y,115 Applications


There are a lot of Nexperia USA Inc.
PBSS5240Y,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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