NXH35C120L2C2SG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Modules

Maximum Gate Emitter Voltage (V) :

±20

Continuous Collector Current :

35

Typical Collector Emitter Saturation Voltage (V) :

1.8

RoHS :

Details

Channel Type :

N

PCB changed :

26

Military :

No

HTS :

8541.29.00.95

Mounting Type :

Through Hole

Configuration :

Hex

NTC Thermistor :

yes

Maximum Collector-Emitter Voltage (V) :

1200

Operating Temperature :

-40°C ~ 150°C (TJ)

Input :

Three Phase Bridge Rectifier

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 35A

Collector Emitter Saturation Voltage :

1.8

ECCN (US) :

EAR99

Product :

IGBT Silicon Modules

IGBT Type :

-

Product Category :

IGBT Modules

Packaging :

Tube

Mounting :

Through Hole

Input Capacitance (Cies) @ Vce :

8.33 nF @ 20 V

Package Height :

8

Product Status :

Active

Maximum Operating Temperature (°C) :

150

Current - Collector (Ic) (Max) :

35 A

Power - Max :

20 mW

Maximum Power Dissipation (mW) :

20(Typ)

Current - Collector Cutoff (Max) :

250 µA

Package Type :

DIP26

Product Type :

IGBT Modules

Maximum Continuous Collector Current (A) :

35

Minimum Operating Temperature :

- 40 C

Subcategory :

IGBTs

Package Length :

73.2

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

105

Series :

-

Minimum Operating Temperature (°C) :

-40

Supplier Device Package :

26-DIP

Brand :

onsemi

Supplier Package :

DIP

Maximum Gate Emitter Leakage Current (uA) :

0.4

RoHS Status :

RoHS Compliant

Package / Case :

26-PowerDIP Module (1.199, 47.20mm)

Package Width :

40.2

Package :

Tube

Base Product Number :

NXH35

Manufacturer :

onsemi

Pin Count :

26