NX7002BKMBYL

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Power Dissipation-Max :

350mW Ta 3.1W Tc

Pin Count :

3

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

FET Type :

N-Channel

Published :

2014

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchMOS™

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Factory Lead Time :

8 Weeks

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

3-XFDFN

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 200mA, 10V

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

23.6pF @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

350mA

DS Breakdown Voltage-Min :

60V