NX3008PBKMB,315

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Mfr.Part #
NX3008PBKMB,315
Manufacturer
Nexperia
Package / Case
3-XFDFN
Datasheet
Download
Description
NEXPERIA NX3008PBKMB - SMALL SIG
Stock
30,000
In Stock :
30,000

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Number of Pins :
3
Vgs(th) (Max) @ Id :
1.1V @ 250μA
Packaging :
Tape and Reel (TR)
FET Type :
P-Channel
Gate to Source Voltage (Vgs) :
8V
Published :
2011
Continuous Drain Current (ID) :
300mA
Rds On (Max) @ Id, Vgs :
4.1 Ω @ 200mA, 4.5V
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
30V
Element Configuration :
Single
Pin Count :
3
Max Dual Supply Voltage :
-30V
Power Dissipation-Max :
360mW Ta 2.7W Tc
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
46pF @ 15V
Turn On Delay Time :
19 ns
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
715mW
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
65 ns
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
300mA Ta
Mounting Type :
Surface Mount
Number of Elements :
1
Contact Plating :
Tin
Rise Time :
30ns
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Fall Time (Typ) :
38 ns
Drain to Source Breakdown Voltage :
-30V
Package / Case :
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs :
0.72nC @ 4.5V
Datasheets
NX3008PBKMB,315
Introducing Transistors - FETs, MOSFETs - Single Nexperia NX3008PBKMB,315 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:3-XFDFN, NX3008PBKMB,315 pinout, NX3008PBKMB,315 datasheet PDF, NX3008PBKMB,315 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia NX3008PBKMB,315 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia NX3008PBKMB,315


P-Channel Tape & Reel (TR) 4.1 Ω @ 200mA, 4.5V ±8V 46pF @ 15V 0.72nC @ 4.5V 30V 3-XFDFN

NX3008PBKMB,315 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 46pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 300mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Powered by -30V, it supports the maximal dual supply voltage.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

NX3008PBKMB,315 Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 65 ns
a 30V drain to source voltage (Vdss)


NX3008PBKMB,315 Applications


There are a lot of Nexperia USA Inc.
NX3008PBKMB,315 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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