NX2301P,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, TrenchMOS™

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

120m Ω @ 1A, 4.5V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

JEDEC-95 Code :

TO-236AB

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.19Ohm

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Operating Temperature :

150°C TJ

Power Dissipation-Max :

400mW Ta 2.8W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Published :

2010

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Pin Count :

3

HTS Code :

8541.21.00.95

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing