NX138BKR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.265A

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-236AB

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

265mA

Published :

2016

FET Type :

N-Channel

Power Dissipation-Max :

310mW Ta

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Drain-source On Resistance-Max :

3.8Ohm

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pin Count :

3

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

60V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

20.2pF @ 30V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

IEC-60134

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

265mA Ta

Gate Charge (Qg) (Max) @ Vgs :

0.49nC @ 4.5V

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 200mA, 10V

Terminal Position :

Dual

Vgs (Max) :

±20V