NX138BKR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

0.265A

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

310mW Ta

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

265mA Ta

Vgs (Max) :

±20V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 200mA, 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

265mA

FET Type :

N-Channel

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

0.49nC @ 4.5V

JEDEC-95 Code :

TO-236AB

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Mount :

Surface Mount

Drain-source On Resistance-Max :

3.8Ohm

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

20.2pF @ 30V

Transistor Element Material :

SILICON

Reference Standard :

IEC-60134

Published :

2016

Transistor Application :

SWITCHING