NVTFS6H850NWFTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

FET Type :

N-Channel

Number of Terminations :

5

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0095Ohm

JESD-609 Code :

e3

Package / Case :

8-PowerWDFN

Power Dissipation-Max :

3.2W Ta 107W Tc

Pbfree Code :

yes

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain to Source Voltage (Vdss) :

80V

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1140pF @ 40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

80V

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)

Avalanche Energy Rating (Eas) :

271 mJ

Vgs(th) (Max) @ Id :

4V @ 70μA

Pulsed Drain Current-Max (IDM) :

300A

Transistor Element Material :

SILICON

Terminal Form :

Flat

JESD-30 Code :

S-PDSO-F5

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

11A Ta 68A Tc

Drain Current-Max (Abs) (ID) :

11A

RoHS Status :

RoHS Compliant