NVTFS5C673NLTAG
- Mfr.Part #
- NVTFS5C673NLTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 13A/50A 8WDFN
- Stock
- 2,880
- In Stock :
- 2,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 9.8m Ω @ 25A, 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 3.1W Ta 46W Tc
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 88 mJ
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 5
- Terminal Form :
- Flat
- Series :
- Automotive, AEC-Q101
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerWDFN
- Factory Lead Time :
- 18 Weeks
- Number of Elements :
- 1
- JESD-30 Code :
- S-PDSO-F5
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 46W
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 16 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 50A Tc
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 50A
- Max Junction Temperature (Tj) :
- 175°C
- Pulsed Drain Current-Max (IDM) :
- 290A
- Number of Channels :
- 1
- Height :
- 800μm
- Turn On Delay Time :
- 6 ns
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Datasheets
- NVTFS5C673NLTAG

N-Channel Tape & Reel (TR) 9.8m Ω @ 25A, 10V ±20V 880pF @ 25V 9.5nC @ 10V 8-PowerWDFN
NVTFS5C673NLTAG Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 88 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 880pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 50A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 290A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NVTFS5C673NLTAG Features
the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 290A.
NVTFS5C673NLTAG Applications
There are a lot of ON Semiconductor
NVTFS5C673NLTAG applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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