NVTFS5826NLWFTWG
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- Mfr.Part #
- NVTFS5826NLWFTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.6A 8WDFN
- Stock
- 28,711
- In Stock ：
- 28,711
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 10A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 60V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9 ns
- Lead Free :
- Lead Free
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 29ns
- Fall Time (Typ) :
- 21 ns
- Turn-Off Delay Time :
- 14 ns
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-PowerWDFN
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 25V
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Factory Lead Time :
- 23 Weeks
- Surface Mount :
- yes
- Pin Count :
- 8
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 20A
- Power Dissipation-Max :
- 3.2W Ta 22W Tc
- Datasheets
- NVTFS5826NLWFTWG
N-Channel Tape & Reel (TR) 24m Ω @ 10A, 10V ±20V 850pF @ 25V 16nC @ 10V 60V 8-PowerWDFN
NVTFS5826NLWFTWG Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 850pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NVTFS5826NLWFTWG Features
a continuous drain current (ID) of 20A
the turn-off delay time is 14 ns
a 60V drain to source voltage (Vdss)
NVTFS5826NLWFTWG Applications
There are a lot of ON Semiconductor
NVTFS5826NLWFTWG applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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