NVTFS5826NLWFTAG
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- Mfr.Part #
- NVTFS5826NLWFTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.6A 8WDFN
- Stock
- 19,905
- In Stock ：
- 19,905
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 23 Weeks
- Rise Time :
- 29ns
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerWDFN
- Turn-Off Delay Time :
- 14 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Published :
- 2011
- Power Dissipation-Max :
- 3.2W Ta 22W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Turn On Delay Time :
- 9 ns
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Continuous Drain Current (ID) :
- 20A
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 10A, 10V
- Number of Pins :
- 8
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Pin Count :
- 8
- Fall Time (Typ) :
- 21 ns
- Element Configuration :
- Single
- Datasheets
- NVTFS5826NLWFTAG
N-Channel Tape & Reel (TR) 24m Ω @ 10A, 10V ±20V 850pF @ 25V 16nC @ 10V 8-PowerWDFN
NVTFS5826NLWFTAG Overview
A device's maximum input capacitance is 850pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NVTFS5826NLWFTAG Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 14 ns
NVTFS5826NLWFTAG Applications
There are a lot of ON Semiconductor
NVTFS5826NLWFTAG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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