NVTFS5820NLTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Power Dissipation :

21W

Factory Lead Time :

23 Weeks

Drain to Source Breakdown Voltage :

60V

Threshold Voltage :

2.3V

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 15 hours ago)

Pbfree Code :

yes

Fall Time (Typ) :

22 ns

Power Dissipation-Max :

3.2W Ta 21W Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

ECCN Code :

EAR99

Length :

3.15mm

Drain Current-Max (Abs) (ID) :

29A

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 8.7A, 10V

Halogen Free :

Halogen Free

Height :

750μm

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Number of Terminations :

5

Rise Time :

28ns

Input Capacitance (Ciss) (Max) @ Vds :

1462pF @ 25V

Surface Mount :

yes

Turn-Off Delay Time :

19 ns

Pulsed Drain Current-Max (IDM) :

247A

REACH SVHC :

No SVHC

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Package / Case :

8-PowerWDFN

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pin Count :

8

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Width :

3.15mm

JESD-30 Code :

S-PDSO-F5

Radiation Hardening :

No

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

11A

Mounting Type :

Surface Mount

Published :

2013

Vgs (Max) :

±20V