NVTFS5116PLTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

21W

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

6A

Rise Time :

68ns

Package / Case :

8-PowerWDFN

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Published :

2011

Turn-Off Delay Time :

24 ns

Rds On (Max) @ Id, Vgs :

52m Ω @ 7A, 10V

JESD-609 Code :

e3

FET Type :

P-Channel

Continuous Drain Current (ID) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1258pF @ 25V

Drain to Source Breakdown Voltage :

-60V

Resistance :

52mOhm

Vgs (Max) :

±20V

Number of Terminations :

5

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Turn On Delay Time :

14 ns

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

yes

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

45 mJ

Power Dissipation-Max :

3.2W Ta 21W Tc

Transistor Element Material :

SILICON

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

36 ns

Number of Pins :

8

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-F5

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V