NVTFS4C25NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

22.1A

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

S-PDSO-F5

Halogen Free :

Halogen Free

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

10.3nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

90A

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drain-source On Resistance-Max :

0.017Ohm

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

11.2 mJ

Current - Continuous Drain (Id) @ 25°C :

10.1A Ta 22.1A Tc

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Fall Time (Typ) :

2 ns

Pbfree Code :

yes

Power Dissipation-Max :

3W Ta 14.3W Tc

Element Configuration :

Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Lead Free :

Lead Free

Published :

2014

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

JESD-609 Code :

e3

Turn-Off Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4 ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Pin Count :

8

Drain Current-Max (Abs) (ID) :

10.1A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Rise Time :

25ns

Number of Terminations :

5

Terminal Position :

Dual

Factory Lead Time :

18 Weeks

Number of Elements :

1

Terminal Form :

Flat

Package / Case :

8-PowerWDFN

Surface Mount :

yes

Mounting Type :

Surface Mount

FET Type :

N-Channel