NVTFS4C13NWFTWG
- Mfr.Part #
- NVTFS4C13NWFTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A 8WDFN
- Stock
- 30,269
- In Stock :
- 30,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Reference Standard :
- AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0094Ohm
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 30A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerWDFN
- Power Dissipation-Max :
- 3W Ta 26W Tc
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- Pulsed Drain Current-Max (IDM) :
- 152A
- JESD-30 Code :
- S-PDSO-F5
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 10 mJ
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 15.2nC @ 10V
- DS Breakdown Voltage-Min :
- 30V
- Terminal Finish :
- Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 40A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2014
- Number of Terminations :
- 5
- Continuous Drain Current (ID) :
- 14A
- Vgs (Max) :
- ±20V
- Datasheets
- NVTFS4C13NWFTWG

N-Channel Tape & Reel (TR) 9.4m Ω @ 30A, 10V ±20V 770pF @ 15V 15.2nC @ 10V 30V 8-PowerWDFN
NVTFS4C13NWFTWG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 10 mJ.A device's maximal input capacitance is 770pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain current is 40A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 152A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVTFS4C13NWFTWG Features
the avalanche energy rating (Eas) is 10 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 152A.
a 30V drain to source voltage (Vdss)
NVTFS4C13NWFTWG Applications
There are a lot of ON Semiconductor
NVTFS4C13NWFTWG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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