NVTFS4C13NTWG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Terminal Finish :

Tin (Sn)

Published :

2014

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 10V

Vgs (Max) :

±20V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Continuous Drain Current (ID) :

14A

Lead Free :

Lead Free

Power Dissipation :

26W

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Mounting Type :

Surface Mount

Terminal Form :

Flat

ECCN Code :

EAR99

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0094Ohm

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

40A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

5

JESD-30 Code :

S-PDSO-F5

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

3W Ta 26W Tc

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Package / Case :

8-PowerWDFN