NVTFS4C13NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Published :

2014

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0094Ohm

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101

Package / Case :

8-PowerWDFN

Transistor Application :

SWITCHING

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

10 mJ

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 30A, 10V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Power Dissipation-Max :

3W Ta 26W Tc

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 10V

JESD-30 Code :

S-PDSO-F5

ECCN Code :

EAR99

Continuous Drain Current (ID) :

14A

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Pulsed Drain Current-Max (IDM) :

152A

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Terminations :

5

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

40A

Factory Lead Time :

18 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE