NVTFS4C10NTAG
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- Mfr.Part #
- NVTFS4C10NTAG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 15.3A/47A 8WDFN
- Stock
- 1,783
- In Stock ：
- 1,783
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 7.4m Ω @ 30A, 10V
- Pin Count :
- 8
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 15.3A Ta 47A Tc
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 4 ns
- Turn On Delay Time :
- 6 ns
- Halogen Free :
- Halogen Free
- Drain-source On Resistance-Max :
- 0.0074Ohm
- Turn-Off Delay Time :
- 18 ns
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Power Dissipation-Max :
- 3W Ta 28W Tc
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 26 mJ
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Package / Case :
- 8-PowerWDFN
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 47A
- JESD-30 Code :
- S-PDSO-F5
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 15.3A
- Rise Time :
- 25ns
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 19.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 993pF @ 15V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 196A
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Published :
- 2014
- Reference Standard :
- AEC-Q101
- Datasheets
- NVTFS4C10NTAG
N-Channel Tape & Reel (TR) 7.4m Ω @ 30A, 10V ±20V 993pF @ 15V 19.3nC @ 10V 8-PowerWDFN
NVTFS4C10NTAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 26 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 993pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 15.3A.As a result of its turn-off delay time, which is 18 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 196A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NVTFS4C10NTAG Features
the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 196A.
NVTFS4C10NTAG Applications
There are a lot of ON Semiconductor
NVTFS4C10NTAG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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