NVTFS4C08NWFTWG
- Mfr.Part #
- NVTFS4C08NWFTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17A 8WDFN
- Stock
- 4,927
- In Stock :
- 4,927
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Reference Standard :
- AEC-Q101
- Rds On (Max) @ Id, Vgs :
- 5.9m Ω @ 30A, 10V
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.1W Ta 31W Tc
- Package / Case :
- 8-PowerWDFN
- Drain Current-Max (Abs) (ID) :
- 55A
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta
- Drain-source On Resistance-Max :
- 0.0059Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1113pF @ 15V
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 253A
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 18.2nC @ 10V
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 17A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Flat
- Published :
- 2014
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 30V
- Number of Elements :
- 1
- Number of Terminations :
- 5
- JESD-30 Code :
- S-PDSO-F5
- Datasheets
- NVTFS4C08NWFTWG

N-Channel Tape & Reel (TR) 5.9m Ω @ 30A, 10V ±20V 1113pF @ 15V 18.2nC @ 10V 30V 8-PowerWDFN
NVTFS4C08NWFTWG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximal input capacitance is 1113pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain current is 55A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 253A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVTFS4C08NWFTWG Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 17A
based on its rated peak drain current 253A.
a 30V drain to source voltage (Vdss)
NVTFS4C08NWFTWG Applications
There are a lot of ON Semiconductor
NVTFS4C08NWFTWG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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