NVTFS4C08NWFTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

Drain Current-Max (Abs) (ID) :

55A

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1113pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

18.2nC @ 10V

Lead Free :

Lead Free

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0059Ohm

Terminal Position :

Dual

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Continuous Drain Current (ID) :

17A

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-PDSO-F5

Avalanche Energy Rating (Eas) :

20 mJ

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.1W Ta 31W Tc

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Published :

2014

Reference Standard :

AEC-Q101

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Terminal Form :

Flat

Case Connection :

DRAIN

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

253A