NVTFS4C08NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-F5

Pulsed Drain Current-Max (IDM) :

253A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0059Ohm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Power Dissipation-Max :

3.1W Ta 31W Tc

Avalanche Energy Rating (Eas) :

20 mJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

8-PowerWDFN

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1113pF @ 15V

Number of Terminations :

5

Terminal Form :

Flat

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

17A

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

55A

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

18.2nC @ 10V

Vgs (Max) :

±20V

Pbfree Code :

yes

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation :

31W