NVTFS4C06NWFTWG
- Mfr.Part #
- NVTFS4C06NWFTWG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A 8WDFN
- Stock
- 30,192
- In Stock :
- 30,192
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 367A
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1683pF @ 15V
- Continuous Drain Current (ID) :
- 21A
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- JESD-30 Code :
- S-PDSO-F5
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.1W Ta 37W Tc
- Published :
- 2014
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- 8-PowerWDFN
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Avalanche Energy Rating (Eas) :
- 34 mJ
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 30A, 10V
- Number of Terminations :
- 5
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- DS Breakdown Voltage-Min :
- 30V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 37W
- Datasheets
- NVTFS4C06NWFTWG

N-Channel Tape & Reel (TR) 4.2m Ω @ 30A, 10V ±20V 1683pF @ 15V 26nC @ 10V 30V 8-PowerWDFN
NVTFS4C06NWFTWG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 34 mJ.A device's maximum input capacitance is 1683pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 367A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NVTFS4C06NWFTWG Features
the avalanche energy rating (Eas) is 34 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 367A.
a 30V drain to source voltage (Vdss)
NVTFS4C06NWFTWG Applications
There are a lot of ON Semiconductor
NVTFS4C06NWFTWG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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